n0712 tkim tc-00002823/hd 120910 qb no. a1967-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 WPH4003 n-channel power mosfet 1700v, 3a, 10.5 , to-3pf-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance rds (on) =8.2 (typ.) ? 10v drive ? input capacitance ciss=850pf (typ.) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 1700 v gate-to-source voltage v gss 30 v drain current (dc) i dc *1 limited only maximum temperature tch=150 c3a i dpack *2 tc=25 c (our ideal heat dissipation condition) *3 2.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 6 a allowable power dissipation p d 3.0 w tc=25 c55w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 49 mj avalanche current *5 i av 3a note : * 1 shows chip capability * 2 package limited * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator mad e of aluminium. * 4 v dd =50v, l=10mh, i av =3a (fig.1) * 5 l 10mh, single pulse package dimensions unit : mm (typ) 7538a-002 ordering number : ena1967a product & package information ? package : to-3pf-3l ? jeita, jedec : sc-96 ? minimum packing quantity : 30 pcs./magazine marking electrical connection 1 3 2 ph4003 lot no. 1 : gate 2 : drain 3 : source to-3pf-3l 15.5 5.5 3.0 0.9 0.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.5 3.3 10.0 25.0 24.5 19.3 5.45 5.45 2.0 WPH4003-1e
WPH4003 no. a1967-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =10ma, v gs =0v 1700 v zero-gate voltage drain current i dss v ds = 1360 v, v gs =0v 1ma gate-to-source leakage current i gss v gs = 30v, v ds =0v 100 na cutoff voltage v gs (off) v ds =10v, i d =1ma 24v forward transfer admittance | yfs | v ds =20v, i d = 1.5 a 1.2 2.4 s static drain-to-source on-state resistance r ds (on) i d = 1.5 a, v gs =10v 8.2 10.5 input capacitance ciss v ds =30v, f=1mhz 850 pf output capacitance coss 90 pf reverse transfer capacitance crss 27 pf turn-on delay time t d (on) see fig.2 19 ns rise time t r 21 ns turn-off delay time t d (off) 200 ns fall time t f 55 ns total gate charge qg v ds =200v, v gs =10v, i d =3a 48 nc gate-to-source charge qgs 6nc gate-to-drain ?miller? charge qgd 22 nc diode forward voltage v sd i s =3a, v gs =0v 0.8 1.5 v reverse recovery time t rr see fig.3 i s =3a, v gs =0v, di/dt=100a/ s 410 ns reverse recovery charge q rr 3000 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit ordering information device package shipping memo WPH4003-1e to-3pf-3l 30pcs./magazine pb free 50 50 rg v dd l 10v 0v WPH4003 g s d p. g 50 g s d i d =1.5a r l =125 v dd =200v v out WPH4003 v in pw 10 s d.c. 1% 10v 0v v in v dd =50v WPH4003 500 h driver mosfet g s d
WPH4003 no. a1967-3/7 drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a i d -- v ds i d -- v gs it16973 it16974 0 0 6 4 5 3 2 50 40 10 30 20 45 35 525 15 1 0 0 6 5 4 3 14 26 4 8 10 12 2 1 v gs =4v 5v 6v 10v --25 c 25 c tc= 75 c tc=25 c v ds =20v static drain to source on state resistance, r ds (on) -- static drain to source on state resistance, r ds (on) -- case temperature, tc -- c forward drain to source voltage, v sd -- v forward drain current, i s -- a gate to source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- tc i s -- v sd it16975 it16963 --50 --25 0 25 50 75 100 125 150 0.0 25.0 10.0 20.0 15.0 5.0 it16965 0 0.4 0.2 0.6 0.8 1.2 1.0 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 25 c --25 c tc=75 c single pulse v gs =0v v gs =10v, i d =1.5a 0 0 20 16 12 10 9 8 6 5 47 8 4 18 14 10 6 2 single pulse i d =1.5a 75 c 25 c tc= --25 c total gate charge, qg -- nc gate to source voltage, v gs -- v qg -- v gs it16967 0 4 0 10 3 2 1 8 9 7 6 5 60 30 20 40 50 10 drain current, i d -- a forward transfer admittance, | y fs | -- s | y fs | -- i d it16964 0.1 0.01 2 3 5 7 2 3 5 7 2 3 5 7 10 1.0 1.0 2 3 5 7 2 3 5 7 10 0.1 v ds =20v 25 c tc= --25 c 75 c single pulse drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it16966 f=1mhz ciss coss crss 0 7 100 10 1000 5 3 2 7 5 3 2 7 5 3 2 50 30 5152025354045 10 10000 v ds =200v id=3a 8v
WPH4003 no. a1967-4/7 ambient temperature, ta -- c avalanche energy derating factor -- % drain to source voltage, v ds -- v drain current, i d -- a a s o eas -- ta it16969 it16972 0 0 20 40 60 80 100 175 120 50 100 150 25 75 125 1.0 10.0 2 3 5 7 2 3 5 7 2 3 5 7 0.1 0.01 23 57 23 57 23 57 23 57 1.0 1 100 10 1000 operation in this area is limited by r ds (on). 10 s 10 0 s 10ms 1ms 100ms i dc ( * 1) =3a i dpack ( * 2) =2.5a i dp =6a (pw 10 s) dc operation tc=25 c single pulse ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w p d -- ta p d -- tc it16970 it16971 0 0 20 40 0.5 1.0 60 2.0 1.5 80 100 120 3.0 2.5 3.5 140 160 0 0 20 40 20 10 60 40 30 80 100 120 50 60 140 160 drain current, i d -- a switching time, s/w time -- ns s/w time -- i d it16968 v dd =200v v gs =10v t d (off) t f t r t d (on) 100 10 3 2 5 7 3 2 5 7 0.1 1.0 23 5 23 5 7 23 5 * 1. shows chip capability * 2. our ideal heat dissipation condition
WPH4003 no. a1967-5/7 magazine speci cation WPH4003-1e
WPH4003 no. a1967-6/7 outline drawing WPH4003-1e mass (g) unit 5.5 * for reference mm
WPH4003 ps no. a1967-7/7 note on usage : since the WPH4003 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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